2SB1416 - Silicon PNP epitaxial planar type Transistor
Panasonic
Key Features
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High forward current transfer ratio hFE which has satisfactory linearity.
Low collector-emitter saturation voltage VCE(sat).
Allowing automatic insertion with radial taping
10.8±0.2
0.65±0.1 2.5±0.1
0.85±0.1 1.0±0.1 0.8 C
90˚
0.8 C
16.0±1.0
0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2.
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak co.
Silicon PNP epitaxial planar type Power Transistors
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Power Transistors
2SB1416
Silicon PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SD2136
3.8±0.2
Unit: mm
7.5±0.2 4.5±0.2
■ Features
• High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Allowing automatic insertion with radial taping
10.8±0.2
0.65±0.1 2.5±0.1
0.85±0.1 1.0±0.1 0.8 C
90˚
0.8 C
16.0±1.0
0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −60 −60 −5 −3 −5 1.
2SB1416 Datasheet
