Datasheet4U Logo Datasheet4U.com

2SB1419 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Optimum for the output stage of a HiFi audio amplifier ABSOL

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB1419 SILICON POWER TRANSISTOR SavantIC
2SB1411 Silicon PNP Transistor Toshiba Semiconductor
2SB1411 SILICON POWER TRANSISTOR SavantIC
2SB1412 Low Frequency Transistor Rohm
2SB1412 Silicon PNP Power Transistor Inchange Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SB1411 PNP Transistor
2SB1400 PNP Transistor
2SB1402 PNP Transistor
2SB1403 PNP Transistor
2SB1404 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -20 A 120 W 3.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1419 isc website：www.iscsemi.