Datasheet Summary
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
- High DC Current Gain-
: hFE= 1500(Min)@ (VCE= -3V, IC= -1A)
- Low Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max)@ (IC= -1A, IB= -2mA)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- High power switching applications.
- Hammer drive, pulse motor drive...
