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2SB1411 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -1A) Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -1A, IB= -2mA) Minimum Lot-to-Lot variations for robust device performance and reliable operation

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -1A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -1A, IB= -2mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation 2SB1411 APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications.