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2SB1412 Datasheet

The 2SB1412 is a Silicon PNP Power Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number2SB1412
ManufacturerInchange Semiconductor
Overview ·Low collector-to-emitter saturation voltage : VCE(sat)= -1.0V(Max)@IC= -4A ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable opera. -Base Breakdown Voltage IC= -50uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50uA; IC= 0 ICBO Collector Cutoff Current VCB= -20V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -0.5A; VCE= -2.
Part Number2SB1412
DescriptionLow Frequency Transistor
ManufacturerGalaxy Microelectronics
Overview Low Frequency Transistor FEATURES  Low VCE(sat) VCE(sat) = -0.35V(Typ) (IC/IB=-4A/-0.1A)  Excellent DC current gain characteristics  Complements the 2SD2118  RoHS compliant with Halogen-free Prod.
* Low VCE(sat) VCE(sat) = -0.35V(Typ) (IC/IB=-4A/-0.1A)
* Excellent DC current gain characteristics
* Complements the 2SD2118
* RoHS compliant with Halogen-free Product Specification 2SB1412I 2SB1412 Ordering Information Part Number Package 2SB1412I-P TO-251 2SB1412I-Q TO-251 2SB1412I-R TO.
Part Number2SB1412
DescriptionLow Frequency Transistor
ManufacturerROHM
Overview Low frequency transistor (−20V,−5A) 2SB1412 zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. zStruct. 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. zStructure Epitaxial planar type PNP silicon transistor zDimensions (Unit : mm) 2SB1412 ROHM : CPT3 EIAJ : SC-63 ∗ Denotes hFE (1) Base (2) Collector (3) Emitt.
Part Number2SB1412
DescriptionPNP Transistor
ManufacturerWeitron Technology
Overview 2SB1412 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 2 3 Features: * Excellent DC Current Gain Characteristics * Low VCE(Sat) 1 D-PAK(TO-252) Mechanical Data: * C. * Excellent DC Current Gain Characteristics * Low VCE(Sat) 1 D-PAK(TO-252) Mechanical Data: * Case : Molded Plastic * Weight : 0.925 grams ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Dis.

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