Unisonic Technologies 2SC2881
NPN SILICON TRANSISTOR
APPLICATIONS
POWER AMPLIFIERAPPLICATIONS
●FEATURES
* High voltage: VCEO=120V * High transition frequency: fT=120MHz (typ.) * Complementary to 2SA1201● ORDERING INFORMATION Ordering Number Lead Free Halogen Free - 2SC2881G-x-AB3-R 2SC2881L-x-T92-B 2SC2881G-x-T92-B 2SC2881L-x-T92-K 2SC2881G-x-T92-K Note: Pin Assignment: B: Base C: Collector E: Emitter Package SOT-89 TO-92 TO-92 Pin Assignment 1 2 3 B C E B C E B C E Packing Tape Reel Tape Box Bulk
● MARKING SOT-89 TO-92 Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 4 QW-R208-032.D 2SC2881 NPN SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS
(TA= 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-base voltage Collector-emitter voltage VCBO 120 V VCEO 120 V Emitter-base voltage Collector current VEBO IC 5 V 800 mA Base current Collector power dissipation IB SOT-89 TO-92 PC 160 mA 500 mW 600 mW Junction temperature TJ 150 C Storage temperature range TSTG -55 ~ 150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.