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2SC2881 Datasheet PDF

Galaxy Century Microelectronics 2SC2881

NPN Silicon Epitaxial Planar Transistor

Part No. 2SC2881
Datasheet 2SC2881 Download
Manufacturer Galaxy Century Microelectronics
Description NPN Silicon Epitaxial Planar Transistor
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2SC2881 datasheet page 1 preview

FEATURES

● High BVCEO
● High DC current gain
● Epitaxial planar die construction
● Complimentary to 2SA1201
● RoHS compliant with Halogen-free

MECHANICAL DATA

● Case: SOT-89
● Molding compound: UL flammability classification rating 94V-0
● Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 SOT-89 Ordering Information Part Number 2SC2881-O 2SC2881-Y Package SOT-89 SOT-89 Shipping Quantity 1000 pcs / Tape & Reel 1000 pcs / Tape & Reel Marking Code CO1 CY1

MAXIMUM RATINGS

(@ TA = 25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Continuous Collector Current Peak Collector Current (tp ≤1ms) Continuous Base Current Symbol VCBO VCEO VEBO IC ICM IB Value 120 120 5 0.8 1.6 0.16 Unit V V V A A A Thermal Characteristics Parameter Symbol Power Dissipation (TA = 25°C) PD Power Dissipation (TA = 25°C) *1 Thermal Resistance Junction-to-Air *1 RθJA Thermal Resistance Junction-to-Case *1 RθJC The...
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