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2SC2881 - NPN Silicon Transistor

Key Features

  • High voltage:VCEO=120V.
  • High transition frequency;fT=120MHz.
  • PC=500mW.
  • Complements the 2SA1201. Pb Lead-free 2SC2881.

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Production specification NPN Silicon Epitaxial Planar Transistor FEATURES  High voltage:VCEO=120V  High transition frequency;fT=120MHz.  PC=500mW.  Complements the 2SA1201. Pb Lead-free 2SC2881 APPLICATIONS  Power and voltage amplifier application. ORDERING INFORMATION Type No. Marking 2SC2881 CO1/CY1 SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC IB PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Base current Collector Dissipation Junction and Storage Temperature 120 120 5 0.8 0.16 500 -55 to +150 Units V V V A A mW ℃ E026 Rev.A www.gmesemi.