| Part number | 2SC2881 |
|---|---|
| Datasheet | 2SC2881_ToshibaSemiconductor.pdf |
| File Size | 140.52 KB |
| Manufacturer | Toshiba |
| Description | Silicon NPN TRANSISTOR |
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier Applications Power Amplifier Applications 2SC2881 Unit: VCEO = 120 V High transition frequency: Mounted on a ceramic substrate (250 mm2 × 0.8 t) Note.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC2881 | NPN Silicon Epitaxial Planar Transistor | GME |
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2SC2881 | NPN SILICON TRANSISTOR | UTC |
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2SC2881 | NPN Transistors | Kexin |
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2SC2881 | Transistors | WILLAS |
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2SC2881-O | NPN Silicon Power Transistors | MCC |
| Part Number | Description |
|---|---|
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