Datasheet4U Logo Datasheet4U.com

C2881 - 2SC2881

📥 Download Datasheet

Datasheet preview – C2881

Datasheet Details

Part number C2881
Manufacturer Toshiba
File Size 140.52 KB
Description 2SC2881
Datasheet download datasheet C2881 Datasheet
Additional preview pages of the C2881 datasheet.
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier Applications Power Amplifier Applications 2SC2881 Unit: mm • High voltage: VCEO = 120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate) • Complementary to 2SA1201 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC PC (Note 1) Tj Tstg 120 120 5 800 160 500 1000 150 −55 to 150 V V V mA mA mW °C °C PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.
Published: |