C2880 - 2SC2880

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Toshiba

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Datasheet Details

Part number	C2880
Manufacturer	Toshiba
File Size	154.11 KB
Description	2SC2880
Datasheet	C2880 Datasheet
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TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC2880 2SC2880 High Voltage Switching Applications Unit: mm • High voltage: VCEO = 150 V • High transition frequency: fT = 120 MHz • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1200 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC PC (Note 1) Tj Tstg 200 150 5 50 10 500 800 150 −55 to 150 V V V mA mA mW °C °C PW-Mini JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) Note 1: Mounted on a ceramic substrate (250 mm2 × 0.

Published: Jun 12, 2015 |