2SC2880 - Silicon NPN Triple Diffused TRANSISTOR

Toshiba

Datasheet Details

Part number	2SC2880
Manufacturer	Toshiba
File Size	116.04 KB
Description	Silicon NPN Triple Diffused TRANSISTOR
Datasheet	2SC2880 Datasheet

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TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC2880 2SC2880 High Voltage Switching Applications · High voltage: VCEO = 150 V · High transition frequency: fT = 120 MHz · Small flat package · PC = 1.0 to 2.0 W (mounted on ceramic substrate) · Complementary to 2SA1200 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation VCBO VCEO VEBO IC IB PC PC (Note 1) 200 150 5 50 10 500 800 Junction temperature Storage temperature range Tj 150 Tstg −55 to 150 Note 1: Mounted on ceramic substrate (250 mm2 × 0.8 t) Unit V V V mA mA mW °C °C Unit: mm PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.