Unisonic Technologies 2SC5305
HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR
| Part No. | 2SC5305 |
|---|---|
| Datasheet | 2SC5305 Download |
| Manufacturer |  Unisonic Technologies |
| Description | HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR |
| Buy | Stock & Price |
FEATURES
* High Hfe For Low Base Drive Requirement * Suitable For Half Bridge Light BallastAPPLICATIONS
* Built-In Free-Wheeling Diode Makes It Specially Suitable For Light BallastAPPLICATIONS
* Well Controlled Storage-Time Spread For All Range Of Hfe● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC5305L-TA3-T 2SC5305G-TA3-T TO-220 2SC5305L-TF3-T 2SC5305G-TF3-T TO-220F Note: Pin Assignment: B: Base E: Emitter C: Collector Pin Assignment 123 BCE BCE Packing Tube Tube
● MARKING Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 5 QW-R203-028.B 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR
● ABSOLUTE MAXIMUM RATING (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector Base Voltage Collector Emitter Voltage VCBO VCEO 800 400 V V Emitter Base Voltage Collector Current (DC) VEBO IC 12 5 V A Collector Current (Pulse)* Base Current (DC) ICP 10 A IB 2 A Base Current (Pulse)* Power Dissipation IBP 4 A PC 75 W Junction Temperature TJ +150 °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
