Datasheet Details
| Part number | 2SC5305 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.82 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5305-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC5305 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.82 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5305-INCHANGE.pdf |
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·High Breakdown Voltage :V(BR)CBO= 1200V (Min) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for inverter lighting applications.
Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 12 A 2 W 35 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC5305 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC5305 | HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR | UTC |
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2SC5305LS | NPN TRANSISTOR | Sanyo Semicon Device |
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