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2SC5305LS - NPN TRANSISTOR

Key Features

  • High breakdown voltage (VCBO=1200V).
  • High reliability (Adoption of HVP process).
  • Adoption of MBIT process. Package Dimensions unit:mm 2079D [2SC5305] 10.0 3.2 3.5 7.2 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 1 2 3 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (pulse) Collector Dissipation Junction Temperature Storage Temperature.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SC5300 NPN TRANSISTOR
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2SC5304LS NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN5884A NPN Triple Diffused Planar Silicon Transistor 2SC5305LS Inverter Lighting Applications Features · High breakdown voltage (VCBO=1200V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2079D [2SC5305] 10.0 3.2 3.5 7.2 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 1 2 3 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C 1:Base 2:Collector 3:Emitter SANYO:TO-220FI (LS) 2.55 2.55 Conditions 2.4 0.