Unisonic Technologies 2SD1782
2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc.| Part No. | 2SD1782 |
|---|---|
| Datasheet | 2SD1782 Download |
| Manufacturer |  Unisonic Technologies |
| Description | NPN SILICON TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
The UTC 2SD1782 is an NPN silicon transistor.●
FEATURES
* High collector-emitter breakdown voltage * Low collector-emitter saturation voltage * High DC current gain● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SD1782L-x-AE3-R 2SD1782G-x-AE3-R SOT-23 Note: Pin Assignment: B: Base E: Emitter C: Collector Pin Assignment 123 BEC Packing Tape Reel
● MARKING D17 L: Lead Free G: Halogen Free Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-107.D 2SD1782 NPN EPITAXIAL SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS
(TA=25°С, unless otherwise stated) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current IC 0.5 A Collector Power Dissipation PC 0.2 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
