2SD1782 - Medium Power Transistor

Galaxy Microelectronics

Key Features

z Low VCE(sat). VCE(sat) =0.2V(Typ. ) (IC / IB=0.5 A / 50mA) z High VCEO, VCEO=80V z Complements the 2SB1198K. Pb Lead-free.

2SD1782 medium power transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	2SD1782
Manufacturer	Galaxy Microelectronics
File Size	186.69 KB
Description	Medium Power Transistor
Datasheet	2SD1782 Datasheet

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Medium Power Transistor FEATURES z Low VCE(sat). VCE(sat) =0.2V(Typ.) (IC / IB=0.5 A / 50mA) z High VCEO, VCEO=80V z Complements the 2SB1198K. Pb Lead-free APPLICATIONS z Epitaxial planar type NPN silicon transistor. Production specification 2SD1782 SOT-23 ORDERING INFORMATION Type No. Marking 2SD1782 AJ Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 80 Units V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current -Continuous 0.5 mA PC Collector Dissipation 0.2 mW Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ C251 Rev.A www.gmicroelec.