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2SD1782 - NPN SILICON TRANSISTOR

General Description

The UTC 2SD1782 is an NPN silicon transistor.

it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc.

Key Features

  • High collector-emitter breakdown voltage.
  • Low collector-emitter saturation voltage.
  • High DC current gain.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 2SD1782 NPN EPITAXIAL SILICON TRANSISTOR POWER NPN TRANSISTOR  DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc.  FEATURES * High collector-emitter breakdown voltage * Low collector-emitter saturation voltage * High DC current gain  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SD1782L-x-AE3-R 2SD1782G-x-AE3-R SOT-23 Note: Pin Assignment: B: Base E: Emitter C: Collector Pin Assignment 123 BEC Packing Tape Reel  MARKING D17 L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co.