UNISONIC TECHNOLOGIES CO., LTD 2SD1782 NPN EPITA.
Rohm
2SD1782K - Power Transistor
2SD1782K Power Transistor (80V, 500mA) Parameter VCEO IC Value 80V 500mA lFeatures 1)Low VCE(sat) VCE(sat)=0.2V(Typ.) (IC/IB=0.5A/50mA) 2)High .
Unisonic Technologies
2SD1782 - NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2SD1782 NPN EPITAXIAL SILICON TRANSISTOR POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1782 is an NPN silicon trans.
JCET
2SD1782 - NPN Transistor
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD1782 TRANSISTOR (NPN) FEATURES z Low VCE(sat) z High BVC.
Kexin
2SD1782K - Power Transistor
SMD Type TransistIoCrs Power Transistor 2SD1782K Features Low VCE(sat).VCE(sat) = 0.2V(Typ.) IC / IB= 0.5A / 50mA High VCEO, VCEO=80V. +0.12.4 -0..
GME
2SD1782 - Medium Power Transistor
Medium Power Transistor FEATURES z Low VCE(sat). VCE(sat) =0.2V(Typ.) (IC / IB=0.5 A / 50mA) z High VCEO, VCEO=80V z Complements the 2SB1198K. Pb Lea.