Unisonic Technologies 3N120-E3
The UTC 3N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.| Part No. | 3N120-E3 |
|---|---|
| Datasheet | 3N120-E3 Download |
| Manufacturer |  Unisonic Technologies |
| Description | 1200V N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
● FEATURES0 * RDS(ON) ≤ 7.0 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 3N120L-TA3-T 3N120G-TA3-T TO-220 3N120L-TF1-T 3N120G-TF1-T TO-220F1 3N120L-TQ2-T 3N120G-TQ2-T TO-263 3N120L-TQ2-R 3N120G-TQ2-R TO-263 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-D137.c 3N120-E3
● MARKING Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 7 QW-R502-D137.c 3N120-E3 Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 1200 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID Pulsed (Note 2) IDM 3 6 A A Avalanche Energy Single Pulsed (N...
