3N120-E3 - 1200V N-CHANNEL POWER MOSFET

Unisonic Technologies

General Description

The UTC 3N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

S0.
RDS(ON) ≤ 7.0 Ω @ VGS=10V, ID=1.5A.
Low Reverse Transfer Capacitance.
Fast Switching Capability.
Avalanche Energy Specified.
Improved dv/dt Capability, High Ruggedness.
SYMBOL Power MOSFET.

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3N120-E3 1200v n-channel power mosfet by Unisonic Technologies - Datasheet Preview

Datasheet Details

Part number	3N120-E3
Manufacturer	Unisonic Technologies
File Size	281.81 KB
Description	1200V N-CHANNEL POWER MOSFET
Datasheet	3N120-E3 Datasheet

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UNISONIC TECHNOLOGIES CO., LTD 3N120-E3 Preliminary 3.0A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 7.0 Ω @ VGS=10V, ID=1.