Datasheet Details
| Part number | 3N120-E3 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 281.81 KB |
| Description | 1200V N-CHANNEL POWER MOSFET |
| Datasheet | 3N120-E3-UTC.pdf |
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Overview: UNISONIC TECHNOLOGIES CO., LTD 3N120-E3 Preliminary 3.0A, 1200V N-CHANNEL POWER MOSFET.
| Part number | 3N120-E3 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 281.81 KB |
| Description | 1200V N-CHANNEL POWER MOSFET |
| Datasheet | 3N120-E3-UTC.pdf |
|
|
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The UTC 3N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
FEATURES0 * RDS(ON) ≤ 7.0 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 3N120L-TA3-T 3N120G-TA3-T TO-220 3N120L-TF1-T 3N120G-TF1-T TO-220F1 3N120L-TQ2-T 3N120G-TQ2-T TO-263 3N120L-TQ2-R 3N120G-TQ2-R TO-263 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel .unisonic..tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-D137.c 3N120-E3 MARKING Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD .unisonic..tw 2 of 7 QW-R502-D137.c 3N120-E3 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 1200 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID Pulsed (Note 2) IDM 3 6 A A Avalanche Energy Single Pulsed (Note 3) EAS 75 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.9 V/ns Power Dissipation TO-220/TO-263 TO-220F1 PD 68 W 18 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.
| Part Number | Description |
|---|---|
| 3N150-E3 | N-CHANNEL POWER MOSFET |
| 3N180-E3 | 1800V N-CHANNEL POWER MOSFET |