3N120-E3
3N120-E3 is 1200V N-CHANNEL POWER MOSFET manufactured by Unisonic Technologies.
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
3.0A, 1200V N-CHANNEL POWER MOSFET
- DESCRIPTION
The UTC 3N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
- Features
- RDS(ON) ≤ 7.0 Ω @ VGS=10V, ID=1.5A
- Low Reverse Transfer Capacitance
- Fast Switching Capability
- Avalanche Energy Specified
- Improved dv/dt Capability, High Ruggedness
- SYMBOL
Power MOSFET
- ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
3N120L-TA3-T
3N120G-TA3-T
TO-220
3N120L-TF1-T
3N120G-TF1-T
TO-220F1
3N120L-TQ2-T
3N120G-TQ2-T
TO-263
3N120L-TQ2-R
3N120G-TQ2-R
TO-263...
