Datasheet4U Logo Datasheet4U.com

3N150-E3 Datasheet N-channel Power MOSFET

Manufacturer: Unisonic Technologies

Overview: UNISONIC TECHNOLOGIES CO., LTD 3N150-E3 3.0A, 1500V N-CHANNEL POWER MOSFET 1 TO-220.

General Description

The UTC 3N150-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

 FEATURES0 * RDS(ON) ≤ 7.5 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness 1 TO-263 1 Power MOSFET 1 TO-220F1 1 TO-247 TO-3PF  SYMBOL 1 1 TO-3P TO-3PN  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3N150L-TA3-T 3N150G-TA3-T 3N150L-TF1-T 3N150G-TF1-T 3N150L-TQ2-T 3N150G-TQ2-T 3N150L-TQ2-R 3N150G-TQ2-R 3N150L-T3F-T 3N150G-T3F-T 3N150L-T3N-T 3N150G-T3N-T 3N150L-T3P-T 3N150G-T3P-T 3N150L-T47-T 3N150G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-263 TO-263 TO-3PF TO-3PN TO-3P TO-247 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel Tube Tube Tube Tube .unisonic..tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 9 QW-R205-903.E 3N150-E3  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD .unisonic..tw 2 of 9 QW-R205-903.E 3N150-E3 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 1500 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous Pulsed (Note 2) ID IDM 3 6 A A Avalanche Energy Single Pulsed (Note 3) EAS 145 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.5 V/ns TO-220/TO-263 78 W TO-220F1 18 W Power Dissipation TO-247 PD 110 W TO-3PF 52 W TO-3P/TO-3PN 120 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.

Key Features

  • S0.
  • RDS(ON) ≤ 7.5 Ω @ VGS=10V, ID=1.5A.
  • Low Reverse Transfer Capacitance.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness 1 TO-263 1 Power MOSFET 1 TO-220F1 1 TO-247 TO-3PF.
  • SYMBOL 1 1 TO-3P TO-3PN.

More Datasheets from Unisonic Technologies

Part Number Description
3N120-E3 1200V N-CHANNEL POWER MOSFET
3N180-E3 1800V N-CHANNEL POWER MOSFET

3N150-E3 Distributor