3N150
Features
Order codes
RDS(on) max.
PTOT
STFW3N150
63 W
STH3N150-2
1500 V
9Ω
STP3N150
2.5 A
140 W
STW3N150
- 100% avalanche tested
- Intrinsic capacitances and Qg minimized
- High speed switching
- Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)
Applications
- Switching applications
S(3) (TO-3PF, TO-220 and TO-247)
S(2, 3) (H2PAK-2)
AM15557v1
Description
These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of parable standard parts from other manufacturers.
Product status link STFW3N150 STH3N150-2 STP3N150 STW3N150
DS5052
- Rev 12
- May 2020 For further information contact your local STMicroelectronics sales office.
.st.
STFW3N150, STH3N150-2, STP3N150, STW3N150
Electrical ratings
Electrical ratings
Table 1.
Symbol
Parameter
Drain-source...
