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157,A3N (SILICON) 3N158,A
P-channel silicon nitride passivated MOS field-effect enhancement mode transistors designed for chopper and switching application.
CASE 20
(T0-72)
G2
I0
STYlE 2 PIN 1. SOURCE 2. GATE
o0 0 3
3. ORAIN
4. SUBSTRATE AND
CASE LEAD
MAXIMUM RATINGS
Rating
Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current
Total Device Dissipation @ TA =25°C
Derate above 25°C Operating Junction Temperature Range Storage Temperature Range
Symbol
VDS VDG VGS ID PD
TJ Tstg
3N157 3N157A 3N158 3N158A
Unit
35 50 Vdc
35 50 Vdc
50 Vdc
30 mAdc
300 1.7
-65 to +175
mW mW/"C
°c
-65 to +200
°c
HANDLING PRECAUTIONS:
MOS field·effect transistors have extremely high input resistance. They can be damaged by the accumulation of excess static charge.
3N157A Datasheet
