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3N158A - P-channel Transistor

Download the 3N158A datasheet PDF. This datasheet also covers the 3N157A variant, as both devices belong to the same p-channel transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (3N157A-ETC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 3N158A
Manufacturer Unknown Manufacturer
File Size 285.17 KB
Description P-channel Transistor
Datasheet download datasheet 3N158A Datasheet

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Other Datasheets by Unknown Manufacturer

Part Number Description
3N153 SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
3N154 SILICON MOS TRANSISTOR
3N155A P-channel Transistor
3N156A P-channel Transistor
3N157A P-channel Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
157,A3N (SILICON) 3N158,A P-channel silicon nitride passivated MOS field-effect enhancement mode transistors designed for chopper and switching application. CASE 20 (T0-72) G2 I0 STYlE 2 PIN 1. SOURCE 2. GATE o0 0 3 3. ORAIN 4. SUBSTRATE AND CASE LEAD MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Total Device Dissipation @ TA =25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS ID PD TJ Tstg 3N157 3N157A 3N158 3N158A Unit 35 50 Vdc 35 50 Vdc 50 Vdc 30 mAdc 300 1.7 -65 to +175 mW mW/"C °c -65 to +200 °c HANDLING PRECAUTIONS: MOS field·effect transistors have extremely high input resistance. They can be damaged by the accumulation of excess static charge.