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3N55-CDQ - 550V N-CHANNEL POWER MOSFET

Description

The UTC 3N55-CDQ is an N-channel power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.

The UTC 3N55-CDQ is generally applied in low power switching mode power appliances and electronic ballast.

Features

  • RDS(ON) ≤ 4.0 Ω @ VGS=10V, ID=1.5A.
  • High Switching Speed.
  • 100% Avalanche Tested.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 3N55-CDQ Preliminary 3A, 550V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N55-CDQ is an N-channel power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC 3N55-CDQ is generally applied in low power switching mode power appliances and electronic ballast.  FEATURES * RDS(ON) ≤ 4.0 Ω @ VGS=10V, ID=1.5A * High Switching Speed * 100% Avalanche Tested  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3N55L-TM3-T 3N55G-TM3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-251 Pin Assignment 1 2 3 G D S Packing Tube  MARKING www.unisonic.com.
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