Unisonic Technologies 3N55-CDQ
3N55-CDQ is an N-channel power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC 3N55-CDQ is generally applied in low power switching mode power appliances and electronic ballast.| Part No. | 3N55-CDQ |
|---|---|
| Datasheet | 3N55-CDQ Download |
| Manufacturer |  Unisonic Technologies |
| Description | 550V N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 4.0 Ω @ VGS=10V, ID=1.5A * High Switching Speed * 100% Avalanche Tested● SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3N55L-TM3-T 3N55G-TM3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-251 Pin Assignment 1 2 3 G D S Packing Tube
● MARKING Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 5 QW-R205-823.a 3N55-CDQ Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 550 V VGSS ±30 V Drain Current Continuous ID 3 A Pulsed (Note 2) IDM 6 A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 63 mJ 5.3 V/ns Power Dissipation Junction Temperature PD 33 W TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
