3N60A Datasheet PDF | Unisonic Technologies

Unisonic Technologies 3N60A

3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Part No.	3N60A
Datasheet	3N60A Download
Manufacturer	Unisonic Technologies
Description	600V N-CHANNEL POWER MOSFET
Buy	Stock & Price

DESCRIPTION

Power MOSFET The UTC

FEATURES

* VDS = 600V, ID = 3A * RDS(ON) = 3.6Ω @VGS = 10 V * Ultra low gate charge ( typical 10 nC ) * Low reverse transfer capacitance ( CRSS = typical 5.5 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Package TO-220F TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tape Reel Tube Ordering Number Lead Free Halogen Free 3N60AL-TF3-T 3N60AG-TF3-T 3N60AL-TN3-R 3N60AG-TN3-R 3N60AL-TN3-T 3N60AG-TN3-T Note: Pin Assignment: G: Gate D: Drain S: Source Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-610.A Datasheet pdf - 3N60A

ABSOLUTE MAXIMUM RATINGS

(TC = 25℃, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 3.0 A Continuous Drain Current ID 3.0 A Pulsed Drain Current (Note 2) IDM 12 A Single P...