Unisonic Technologies 4N60-R
4N60-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.| Part No. | 4N60-R |
|---|---|
| Datasheet | 4N60-R Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 2.5Ω @VGS = 10 V * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness● SYMBOL 1 Power MOSFET TO-220F1
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 4N60L-TF1-T 4N60G-TF1-T Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 Pin Assignment 123 GDS Packing Tube
● MARKING INFORMATION PACKAGE TO-220F1 Copyright © 2014 Unisonic Technologies Co., Ltd MARKING 1 of 6 QW-R502-A64.a 4N60-R Preliminary Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage Avalanche Current (Note 2) VGSS ±30 V IAR 4 A Drain Current Continuous Pulsed (Note 2) ID IDM 4.0 A 16 A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 160 mJ 4.5 V/ns Power Dissipation Junction Temperature PD 36 W TJ +150 °С Operating Temperature Storage Temperature TOPR TSTG -55 ~ +150 -55 ~ +150 °С °С Notes: 1.
