Unisonic Technologies 4N65Z
4N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.| Part No. | 4N65Z |
|---|---|
| Datasheet | 4N65Z Download |
| Manufacturer |  Unisonic Technologies |
| Description | 40A 650V N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness● SYMBOL 1 Power MOSFET TO-220F
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N65ZL- TF3-T 4N65ZG-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F Pin Assignment 123 GDS Packing Tube
● MARKING Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-778.B 4N65Z Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage Avalanche Current (Note 2) VGSS IAR ±20 V 4.4 A Drain Current Continuous Pulsed (Note 2) ID IDM 4.0 A 16 A Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) EAS EAR 260 mJ 10.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 36 W Junction Temperature Operating Temperature TJ TOPR +150 -55 ~ +150 °С °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.
