5N65Z Datasheet PDF | Unisonic Technologies

Unisonic Technologies 5N65Z

5N65Z is a high voltage po wer MOSFET designed to have better characteristics, such as f ast s witching time, lo w gate charge, low on-state resistance and high rugged avalanche characteristics. This po wer MOSF ET is u sually us ed in hig h speed s witching app lications at po wer su pplies, PW M motor controls, high efficient DC to DC converters and bridge circuits.

Part No.	5N65Z
Datasheet	5N65Z Download
Manufacturer	Unisonic Technologies
Description	5A 650V N-CHANNEL POWER MOSFET
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ABSOLUTE MAXIMUM RATINGS

(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±20 V Avalanche Current (Note 2) IAR 5 A Continuous Drain Current ID 5 A Pulsed Drain Current (Note 2) IDM 20 A Single Pulsed (Note 3) EAS 210 Avalanche Energy mJ Repetitive (Note 2) EAR 10 Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 36 W Junction Temperature TJ + 150 °C Operation Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. L = 16.8mH, IAS = 5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL θJA θJC RATINGS 62.5 3.47 UNIT °C/W °C/W Junction to Ambient Junction to...