Unisonic Technologies 6N60-C
6N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | 6N60-C |
|---|---|
| Datasheet | 6N60-C Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 1.5Ω @ VGS=10V, ID=3.1A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 6N60L-TF3-T 6N60G-TF3-T TO-220F 6N60L-TF1-T 6N60G-TF1-T TO-220F1 6N60L-TMS-T 6N60G-TMS-T TO-251S 6N60L-TMS2-T 6N60G-TMS2-T TO-251S2 6N60L-TMS4-T 6N60G-TMS4-T TO-251S4 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-A50.C 6N60-C
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 7 QW-R502-A50.C 6N60-C Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 ±30 V V Avalanche Current (Note 2) Continuous Drain Current IAR 6.2 A ID 6.2 A Pulsed Drain Current (Note 2) IDM 24.8 A Avalanche E...
