Unisonic Technologies 7N10Z
7N10Z is an N-Channel enhancement mode power MOSFET providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10Z uses planar stripe and DMOS technology to provide perfect quality. This device can also withstand high energy pulse in the avalanche and the commutation mode.| Part No. | 7N10Z |
|---|---|
| Datasheet | 7N10Z Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC The UTC 7N10Z is generally applied in low voltage applications, such as DC motor controls, audio amplifiers and high efficiency switching DC/DC converters.●
FEATURES
* RDS(ON) < 0.35Ω @ VGS =10V, ID =3.5A * Fast Switching * Improved dv/dt Capability● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N10ZL-TN3-R 7N10ZG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 123 GDS Packing Tape Reel Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-762.B 7N10Z
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 QW-R502-762.B 7N10Z Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain -Source Voltage Gate-Source Voltage VDSS VGSS 100 V ±20 V Continuous Drain Current TC =25°C ID 7A Pulsed Drain Current (Note 2) IDM 28 A Single Pulsed Avalanche Energy (Note 3) Power Dissipation Derate above 25°C EAS PD 50 mJ 2.5 W 0.02 W/°C Operating Junction Temperature TJ -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note:1.
