7N65L Datasheet PDF | Unisonic Technologies

Unisonic Technologies 7N65L

7N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.

Part No.	7N65L
Datasheet	7N65L Download
Manufacturer	Unisonic Technologies
Description	650V N-CHANNEL POWER MOSFET
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DESCRIPTION

The UTC

FEATURES

* RDS(ON) < 1.2Ω @VGS = 10 V * Ultra low gate charge (typical 29 nC ) * Low reverse transfer Capacitance ( CRSS = typical 16pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N65LL-TA3-T 7N65LG-TA3-T 7N65LL-TF2-T 7N65LG-TF2-T 7N65LL-TF3-T 7N65LG-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F2 TO-220F Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tube Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-821.b 7N65L MARKING Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 7 QW-R502-821.b 7N65L Preliminary Power MOSFET

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 650 V ±30 V Avalanche Current (Note 2) Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) IAR ID IDM EAS EAR dv/dt 7.4 A 7.4 A 29.6 A 530 mJ 14.