Unisonic Technologies 8N60
8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
| Part No. |
8N60 |
| Datasheet |
8N60
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| Manufacturer |
 Unisonic Technologies |
| Description |
N-CHANNEL POWER MOSFET |
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DESCRIPTION
The UTC FEATURES
* RDS(ON) < 1.2Ω@VGS = 10 V * Ultra low gate charge ( typical 28 nC ) * Low reverse transfer capacitance ( CRSS = typical 12.0 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 8N60L-TA3-T 8N60G-TA3-T 8N60L-TF1-T 8N60G-TF1-T 8N60L-TF2-T 8N60G-TF2-T 8N60L-TF3-T 8N60G-TF3-T 8N60L-T2Q-T 8N60G-T2Q-T Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F TO-262 Pin Assignment 123 GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-115.G 8N60 MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 9 QW-R502-115.G 8N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 V ±30 V Avalanche Current (Note 2) Drain Cu...
