Unisonic Technologies 9013
NPN Silicon Transistor
FEATURES
* High total power dissipation. (625mW) * High collector current. (500mA) * Excellent hFE linearity. * Complementary to UTC 9012 1 TO-92● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 9013L-x-T92-B 9013G-x-T92-B TO-92 9013L-x-T92-K 9013G-x-T92-K TO-92 Note: Pin assignment: E: Emitter B: Base C: Collector Pin Assignment 123 EBC EBC Packing Tape Box Bulk
● MARKING Copyright © 2014 Unisonic Technologies Co., LTD 1 of 3 QW-R201-030.C 9013 NPN EPITAXIAL SILICON TRANSISTOR
● ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Collector dissipation PC 625 mW Junction Temperature TJ 125 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.