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9013
NPN SILICON TRANSISTOR
TO
92
FEATURES
1.EMITTER
Power dissipation PCM : 0.625 Collector current ICM : 0.5 Collector-base voltage V(BR)CBO : 45
2.BASE
W A
Tamb=25
3.COLLECTOR
1 2 3
--
V
ELECTRICAL CHARACTERISTICS
Parameter Collector-base breakdown voltage - - Collector-emitter breakdown voltage - - Emitter-base breakdown voltage - - Collector cut-off current -- Collector cut-off current -- Emitter cut-off current --
Tamb=25
Symbol
unless otherwise specified
MIN
MAX UNIT
Test conditions
TYP
V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE HFE
1
Ic= 100
A
IE=0 IB=0 IC=0 IE=0 IB=0 IC=0 IC= 50 mA IC =500 mA
45 25 5 0.1 0.1 0.1 64 40 0.6 1.2 1.4 300
V V V A A A
Ic= 0.