Datasheet Details
| Part number | 9N120-E3 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 270.80 KB |
| Description | N-CHANNEL POWER MOSFET |
| Download | 9N120-E3 Download (PDF) |
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Overview: UNISONIC TECHNOLOGIES CO., LTD 9N120-E3 Preliminary 9.0A, 1200V N-CHANNEL POWER MOSFET.
| Part number | 9N120-E3 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 270.80 KB |
| Description | N-CHANNEL POWER MOSFET |
| Download | 9N120-E3 Download (PDF) |
|
|
|
The UTC 9N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
FEATURES0 * RDS(ON) ≤ 1.8 Ω @ VGS=10V, ID=4.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 9N120L-T47-T 9N120G-T47-T Pin Assignment: G: Gate D: Drain S: Source Package TO-247 Pin Assignment 1 2 3 G D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 5 QW-R205-897.b 9N120-E3 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 1200 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID 9 A Pulsed (Note 2) IDM 18 A Avalanche Energy Single Pulsed (Note 3) EAS 144 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 1.6 V/ns Power Dissipation PD 320 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.
| Part Number | Description |
|---|---|
| 9N150 | 1500V N-CHANNEL POWER MOSFET |