9N120-E3 Overview
The UTC 9N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES0 RDS(ON) ≤ 1.8 Ω @ VGS=10V, ID=4.5A Low Reverse Transfer Capacitance Fast Switching Capability Avalanche Energy Specified Improved dv/dt Capability, High Ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Note:.
9N120-E3 Key Features
- RDS(ON) ≤ 1.8 Ω @ VGS=10V, ID=4.5A
- Low Reverse Transfer Capacitance
- Fast Switching Capability
- Avalanche Energy Specified
- Improved dv/dt Capability, High Ruggedness
- SYMBOL
- ORDERING INFORMATION
- MARKING