Datasheet4U.com

BFG198 Datasheet PDF

Unisonic Technologies BFG198

BFG918 is NPN planar epitaxial transistor in a plastic, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities.
Part No. BFG198
Datasheet BFG198 Download
Manufacturer
Unisonic Technologies
Description NPN TRANSISTOR
Buy Stock & Price
BFG198 datasheet page 1 preview

DESCRIPTION

UTC „

FEATURES

* High current gain * High current capability „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package BFG198L-AA3-R BFG198G-AA3-R SOT-223 Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 123 BCE Packing Tape Reel „ MARKING Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 3 QW-R221-042.a BFG198 Preliminary NPN EPITAXIAL SILICON TRANSISTOR „

ABSOLUTE MAXIMUM RATINGS

(TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage BVCBO 20 V Collector-Emitter Voltage BVCEO 10 V Emitter-Base Voltage BVEBO 2.5 V Collector Current Power Dissipation IC 100 mA PD 1 W Junction Temperature TJ +150 °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „

ELECTRICAL CHARACTERISTICS

(TJ=25°C, unless otherwise specified) PARAME...
BFG198 page 2 preview BFG198 page 3 preview