Unisonic Technologies HMJE13001
NPN Epitaxial Silicon Transistor
| Part No. | HMJE13001 |
|---|---|
| Datasheet | HMJE13001 Download |
| Manufacturer |  Unisonic Technologies |
| Description | NPN Epitaxial Silicon Transistor |
| Buy | Stock & Price |
FEATURES
* Collector-Base Voltage: V(BR)CBO=600V * Collector Current: IC=0.2A NPN EPITAXIAL SILICON TRANSISTOR 1 TO-92 1: BASE 2: COLLECTOR 3: EMITTERABSOLUTE MAXIMUM RATINGS
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic Pc Tj TSTG RATING 600 400 7 200 750 150 -55 ~ +150 UNIT V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Tc=25°C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC current gain Collector-emitter saturation voltage Base-emitter Saturation Voltage Base-emitter Voltage Transition Frequency Fall Time Storage Time SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE fT tF tS TEST CONDITIONS IC=100µA, IE=0 Ic=1mA, IB=0 IE=100µA, IC=0 VCB=600V, IE=0 VCE=400V, IB=0 VE...