Unisonic Technologies MMBTA56
PNP Silicon Transistor
FEATURES
* Collector-Emitter Voltage: VCEO= -80V * Collector Dissipation: PD=350mW 3 2 1 SOT-23 (JEDEC TO-236)● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MMBTA56L-AE3-R MMBTA56G-AE3-R SOT-23 Note: Pin Assignment: B: Base E: Emitter C: Collector Pin Assignment 1 2 3 B E C Packing Tape Reel
● MARKING Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R206-090.C MMBTA56 PNP SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS
(TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage Emitter-Base Voltage VCEO -80 V VEBO -4 V Collector Current - Continuous Total Device Dissipation (Note 2) Derate Above 25°C IC -500 mA PD 350 mW 2.8 mW/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.