UF630 Overview
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
UF630 Key Features
- RDS(ON) < 0.4Ω@ VGS = 10V, ID = 5.0A
- Ultra Low Gate Charge ( typical 19 nC )
- Low Reverse Transfer Capacitance ( CRSS = typical 80 pF )
- Fast Switching Capability
- Avalanche Energy Specified
- Improved dv/dt Capability
- SYMBOL
- ORDERING INFORMATION
- Tape Reel
- Tape Reel