Unisonic Technologies UF830-E
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.| Part No. | UF830-E |
|---|---|
| Datasheet | UF830-E Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* RDS(ON) < 1.5Ω@ VGS=10V, ID=2.5A * Single Pulse Avalanche Energy Rated * Rugged- SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance● SYMBOL 1 Power MOSFET TO-220
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF830L-TA3-T UF830G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 Pin Assignment 123 GDS Packing Tube
● MARKING Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-993.B UF830-E Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TA = 25°C, Unless Otherwise Specified.) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (TJ=25°C ~125°C) VDS 500 V Drain to Gate Voltage (RGS=20kΩ, TJ=25°C ~125°C) VDGR 500 V Gate to Source Voltage VGS ±30 V Drain Current Continuous Pulsed ID IDM 4.5 A 18 A Power Dissipation (TC = 25°C) PD 73 W Single Pulse Avalanche Energy Rating (Note 2) EAS 300 mJ Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1.
