Unisonic Technologies UF830-F
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.| Part No. | UF830-F |
|---|---|
| Datasheet | UF830-F Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* RDS(ON) <1.5Ω @ VGS=10V, ID=2.5A * Single Pulse Avalanche Energy Rated * Rugged- SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UF830L-TA3-T UF830G-TA3-T TO-220 UF830L-TF3-T UF830G-TF3-T TO-220F UF830L-TMS-T UF830G-TMS-T TO-251S UF830L-TN3-R UF830G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS GDS GDS Packing Tube Tube Tube Tape Reel
● MARKING Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-A94.B UF830-F Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TA = 25°C, Unless Otherwise Specified.) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (TJ=25°C ~125°C) VDS 500 V Drain to Gate Voltage (RGS=20kΩ, TJ=25°C ~125°C) VDGR 500 V Gate to Source Voltage Drain Current Continuous Pulsed TO-220 VGS ID IDM ±30 V 4.5 A 18 A 73 W Power Dissipation (TC = 25°C) TO-...
