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UFU520 - DUAL NPN WIDEBAND SILICON RF TRANSISTOR

General Description

The UTC UFU520 are Dual NPN silicon RF transistor for high speed, low noise applications in a plastic.

The UTC UFU520 suitable for small signal to medium power applications up to 2 GHz.

Key Features

  • S.
  • Low noise, high breakdown RF transistor.
  • Minimum noise figure (NF min) = 0.65dB at 900 MHz.
  • Maximum stable gain 19dB at 900 MHz.
  • 11GHz fT silicon technology.

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Full PDF Text Transcription for UFU520 (Reference)

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UNISONIC TECHNOLOGIES CO., LTD UFU520 DUAL NPN WIDEBAND SILICON RF TRANSISTOR DUAL TRANSISTOR  DESCRIPTION The UTC UFU520 are Dual NPN silicon RF transistor for high spe...

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RIPTION The UTC UFU520 are Dual NPN silicon RF transistor for high speed, low noise applications in a plastic. The UTC UFU520 suitable for small signal to medium power applications up to 2 GHz.  FEATURES * Low noise, high breakdown RF transistor * Minimum noise figure (NF min) = 0.65dB at 900 MHz * Maximum stable gain 19dB at 900 MHz * 11GHz fT silicon technology  EQUIVALENT CIRCUIT 6 3 1 4 2 5  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UFU520L-AL6-R UFU520G-AL6-R SOT-363 Note: Pin Assignment: E: Emitter B: Base C: Collector 1 Pin Assignment 2345 6 Packing B1 E1 C2 B2 E2 C1 Tape Reel  MARKING

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