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UFU520Y - DUAL NPN WIDEBAND SILICON RF TRANSISTOR

General Description

The UTC UFU520Y are Dual NPN silicon RF transistor for high speed, low noise applications in a plastic.

The UTC UFU520Y suitable for small signal to medium power applications up to 2 GHz.

Key Features

  • S.
  • Low noise, high breakdown RF transistor.
  • Minimum noise figure (NFmin) = 0.65dB at 900 MHz.
  • Maximum stable gain 19dB at 900 MHz.
  • 11GHz fT silicon technology.

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Full PDF Text Transcription for UFU520Y (Reference)

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UNISONIC TECHNOLOGIES CO., LTD UFU520Y DUAL TRANSISTOR DUAL NPN WIDEBAND SILICON RF TRANSISTOR  DESCRIPTION The UTC UFU520Y are Dual NPN silicon RF transistor for high s...

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CRIPTION The UTC UFU520Y are Dual NPN silicon RF transistor for high speed, low noise applications in a plastic. The UTC UFU520Y suitable for small signal to medium power applications up to 2 GHz.  FEATURES * Low noise, high breakdown RF transistor * Minimum noise figure (NFmin) = 0.65dB at 900 MHz * Maximum stable gain 19dB at 900 MHz * 11GHz fT silicon technology  EQUIVALENT CIRCUIT 63 14 25  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UFU520YL-AL3-R UFU520YG-AL3-R SOT-323 Note: Pin Assignment: E: Emitter B: Base C: Collector Pin Assignment Packing 123456 B1 E1 C2 B2 E2 C1 Tape Reel  MARKING w

More Datasheets from Unisonic Technologies

Part Number Description
UFU520 DUAL NPN WIDEBAND SILICON RF TRANSISTOR