UFU520Y Description
The UTC UFU520Y are Dual NPN silicon RF transistor for high speed, low noise applications in a plastic. The UTC UFU520Y suitable for small signal to medium power applications up to 2 GHz.
UFU520Y Key Features
- Low noise, high breakdown RF transistor
- Minimum noise figure (NFmin) = 0.65dB at 900 MHz
- Maximum stable gain 19dB at 900 MHz
- 11GHz fT silicon technology
- EQUIVALENT CIRCUIT
- ORDERING INFORMATION
- MARKING