UK3919 Description
This UK3919 N-Channel Logic Level MOSFET is produced using UTC Semiconductor advanced Power Trench process which has been tailored to make the on-state resistance minimum and yet maintain low gate charge for superior switching performance especially. The UK3919 is well suited for where low in-line power loss is needed in a very small outline surface mount package, such as low voltage and battery powered applications.
UK3919 Key Features
- RDS(ON) = 5.6mΩ @VGS = 10 V
- Low capacitance
- Optimized gate charge
- Fast switching capability
- Avalanche energy specified
- SYMBOL
- Pb-free plating product number:UK3919L
- ORDERING INFORMATION