DESCRIPTION
This UK3919 N-Channel Logic Level MOSFET is produced using UTC Semiconductor advanced Power Trench process which has been tailored to make the on-state resistance minimum and yet maintain low gate charge for superior switching performance especially. FEATURES
* RDS(ON) = 5.6mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain *Pb-free plating product number:UK3919L 1.Gate 3.Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating UK3919-TN3-R UK3919L-TN3-R UK3919-TN3-T UK3919L-TN3-T Package TO-252 TO-252 Pin Assignment 123 GDS GDS Packing Tape Reel Tube Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-200.A UK3919 Power MOSFET ABSOLUTE MAXIMUM RATINGS
(TC = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 25 V Gate to Source Voltage VGSS ±20 V Continuous Drain Current Pulsed Drain Current (Note1) ID ±64 A IDM ±256 A Single...