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UT100N03-Q - N-CHANNEL POWER MOSFET

General Description

The UT100N03-Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • RDS(ON) ≤ 5.3 mΩ @ VGS=10V, ID=50A.
  • RDS(ON) ≤ 8.0 mΩ @ VGS=4.5V, ID=40A 1 TO-220 1 1 TO-263 PDFN5×6.
  • SYMBOL.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT100N03-Q 100A, 30V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UT100N03-Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 5.3 mΩ @ VGS=10V, ID=50A * RDS(ON) ≤ 8.0 mΩ @ VGS=4.