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UT100N03 - N-CHANNEL POWER MOSFET

General Description

The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S TO-220.
  • RDS(ON) ≤ 4.6 mΩ @ VGS=10 V, ID=50A.
  • RDS(ON) ≤ 6.0 mΩ @ VGS=4.5 V, ID=40A TO-220F/TO-251/TO-252/TO-252D/TO-263.
  • RDS(ON) ≤ 5.3 mΩ @ VGS=10 V, ID=50A.
  • RDS(ON) ≤ 8.0 mΩ @ VGS=4.5 V, ID=40A PDFN5×6.
  • RDS(ON) ≤ 4.0 mΩ @ VGS=10 V, ID=50A.
  • RDS(ON) ≤ 5.8 mΩ @ VGS=4.5 V, ID=40A.
  • SYMBOL 1 TO-252D 1 Power MOSFET 1 TO-220F 1 TO-252 1 PDFN5×6 TO-263 www. unisonic. com. tw Copyright © 2022 Unisonic Technologies Co. , Ltd 1 of 7 QW-R502-193.M UT100N03 Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT100N03 100A, 30V N-CHANNEL POWER MOSFET 1  DESCRIPTION TO-220 The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 TO-251  FEATURES TO-220 * RDS(ON) ≤ 4.6 mΩ @ VGS=10 V, ID=50A * RDS(ON) ≤ 6.0 mΩ @ VGS=4.5 V, ID=40A TO-220F/TO-251/TO-252/TO-252D/TO-263 * RDS(ON) ≤ 5.3 mΩ @ VGS=10 V, ID=50A * RDS(ON) ≤ 8.0 mΩ @ VGS=4.5 V, ID=40A PDFN5×6 * RDS(ON) ≤ 4.0 mΩ @ VGS=10 V, ID=50A * RDS(ON) ≤ 5.8 mΩ @ VGS=4.5 V, ID=40A  SYMBOL 1 TO-252D 1 Power MOSFET 1 TO-220F 1 TO-252 1 PDFN5×6 TO-263 www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-193.