Description
The UTC UT12NP10 incorporates an N-channel MOSFET and a P-channel MOSFET，it uses UTC’s advanced technology to provide customers a minimum on-state resistance and high-speed switching, thereby enabling high-density mounting.
Features
- r>.
- N-Channel RDS(on) ≤ 100 mΩ @ VGS=10V, ID=8.0A RDS(on) ≤ 125 mΩ @ VGS=4.5V, ID=6.0A.
- P-Channel RDS(on) ≤ 165 mΩ @ VGS=-10V, ID=-8.0A RDS(on) ≤ 190 mΩ @ VGS=-4.5V, ID=-6.0A.
- Enhancement mode.
- Low on-resistance RDS(on).
- Low gate charge.
- Fast Switching and High efficiency.
- SYMBOL
Power MOSFET.
UT12NP10 Datasheet
