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UT170N08H - 80V N-CHANNEL POWER MOSFET

General Description

The UTC UT170N08H is an N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance and high switching speed.

Key Features

  • RDS(ON) ≤ 4.0 mΩ @ VGS=10V, ID=85A.
  • High switching speed.
  • Improved dv/dt capability.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT170N08H Preliminary 170A, 80V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT170N08H is an N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance and high switching speed.  FEATURES * RDS(ON) ≤ 4.0 mΩ @ VGS=10V, ID=85A * High switching speed * Improved dv/dt capability  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT170N08HL-TA3-T UT170N08HG-TA3-T UT170N08HL-TQ2-T UT170N08HG-TQ2-T UT170N08HL-TQ2-R UT170N08HG-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel  MARKING www.unisonic.com.