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UT18NP10 - DUAL-CHANNEL POWER MOSFET

General Description

The UTC UT18NP10 incorporates an N-channel MOSFET and a P-channel MOSFET，it uses UTC’s advanced technology to provide customers a minimum on-state resistance and high-speed switching, thereby enabling high-density mounting.

Key Features

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  • N-Channel RDS(on) ≤ 60 mΩ @ VGS=10V, ID=4.5A RDS(on) ≤ 68 mΩ @ VGS=4.5V, ID=4.5A.
  • P-Channel RDS(on) ≤ 220 mΩ @ VGS=-10V, ID=-4.5A RDS(on) ≤ 250 mΩ @ VGS=-4.5V, ID=-4.5A.
  • High switching speed.
  • SYMBOL D 1 TO-252-4 G1 G2 S1 N-Channel S2 P-Channel.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT18NP10 Preliminary DUAL MIDDLE POWER MOSFET (N-CHANNEL/P-CHANNEL) Power MOSFET  DESCRIPTION The UTC UT18NP10 incorporates an N-channel MOSFET and a P-channel MOSFET，it uses UTC’s advanced technology to provide customers a minimum on-state resistance and high-speed switching, thereby enabling high-density mounting. The UTC UT18NP10 is universally applied in high-speed switching, motor driver.  FEATURES * N-Channel RDS(on) ≤ 60 mΩ @ VGS=10V, ID=4.5A RDS(on) ≤ 68 mΩ @ VGS=4.5V, ID=4.5A * P-Channel RDS(on) ≤ 220 mΩ @ VGS=-10V, ID=-4.5A RDS(on) ≤ 250 mΩ @ VGS=-4.5V, ID=-4.