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UT1D5P06 - P-CHANNEL POWER MOSFET

General Description

The UTC UT1D5P06 is a P-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge.

Key Features

  • RDS(ON) ≤ 0.23 Ω @ VGS= -10V, ID= -0.9A RDS(ON) ≤ 0.27 Ω @ VGS= -4.5V, ID= -0.8A.
  • High switching speed.
  • SYMBOL 3 2 1 SOT-23 (EIAJ SC-59).

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Full PDF Text Transcription for UT1D5P06 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UT1D5P06. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD UT1D5P06 -1.5A, -60V P-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC UT1D5P06 is a P-channel enhancement power MOSFET using UTC’s...

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N The UTC UT1D5P06 is a P-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge.  FEATURES * RDS(ON) ≤ 0.23 Ω @ VGS= -10V, ID= -0.9A RDS(ON) ≤ 0.27 Ω @ VGS= -4.5V, ID= -0.8A * High switching speed  SYMBOL 3 2 1 SOT-23 (EIAJ SC-59)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UT1D5P06L-AE3-R UT1D5P06G-AE3-R SOT-23 Note: Pin Assignment: G: Gate S: Source D: Drain Pin Assignment 1 2 3 G S D Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 8 QW-R209-430.

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