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UT30P03 - P-CHANNEL MOSFET

Key Features

  • S.
  • RDS(ON) ≤ 40mΩ @ VGS=-10V, ID =-10A RDS(ON) ≤ 60mΩ @ VGS=-4.5V, ID =-10A.
  • Low Capacitance.
  • Optimized gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL 2.Drain 1 TO-252 1.Gate 3.Source.

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Full PDF Text Transcription for UT30P03 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UT30P03. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD UT30P03 P-CHANNEL ENHANCEMENT MODE POWER MOSFET Power MOSFET  FEATURES * RDS(ON) ≤ 40mΩ @ VGS=-10V, ID =-10A RDS(ON) ≤ 60mΩ @ VGS=-4.5V, I...

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ES * RDS(ON) ≤ 40mΩ @ VGS=-10V, ID =-10A RDS(ON) ≤ 60mΩ @ VGS=-4.5V, ID =-10A * Low Capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  SYMBOL 2.Drain 1 TO-252 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT30P03L-TN3-R UT30P03G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 123 GDS Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-335.

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